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MA88V11B EL DRIVER Line-up & Specification V1.0 MosArt SEMICONDUCTOR CORP. 2000 All rights reserved MosArt BONDING DIAGRAM MA88V11B EL DRIVER EL IND VDD VSS OSC SELF EN Chip size : 808um * 665um Pad size : 90um * 90um FEATURES 3V battery operation No external R-C required for oscillation Two EL driving frequency can be selected to change the colors of EL lights 3 seconds delay after EN released OVERVIEW The MA88V11B is designed for driving EL on watch's back light. The operating voltage is 3V. An inductor is used to generate the high voltage, and one diode, 2 transistors and a resistor are necessary. The EL deriving frequency can be selected for changing the color of EL lights. MA88V11B can be selected for normal trigger or delay 3 seconds. MosArt Semiconductor Corp. Spec. 1 MosArt PIN DESCRIPTION MA88V11B EL DRIVER Pin 1 2 3 4 5 6 7 Pin name EL VDD OSC EN SELF VSS IND Pin description Output for EL charge Chip Power positive Oscillator pin Enable pin, High enable. (*note1 ) EL driving frequency selection(*note1 ) Chip power ground Output for EL discharge *Note1 : Built in pull down resistor OPERATION DESCRIPTION 1) EL driving frequency selection SELF Floating 1 EL driving frequency 500Hz 1000Hz Color of EL lights Green Blue 2) Trigger mode EN No connect EN pin connect a capacitor to VDD Operation in 3V use 0.1uf capacitor. Trigger mode Normal 3 sec. delay MosArt Semiconductor Corp. Spec. 2 MosArt (i) Normal mode MA88V11B EL DRIVER EN EL IND EL LAMP ON (ii) Delay mode ( EN pin connect a capacitor to VDD ) EN EL IND EL LAMP ON Delay 3 second MosArt Semiconductor Corp. Spec. 3 MosArt APPLICATION CIRCUIT (1) Operation voltage 3V, normal trigger mode MA88V11B EL DRIVER 2mH48[ / L1 EL 1N4148 D1 Q1 10K R1 Q2 EL IND VDD VSS MA88V11B OSC SELF EN 3V (2) Operation voltage 3V, delay 3 seconds mode [ 4 2H 8 m/ L1 EL 1N4148 D1 Q1 Q2 10K 1 R EL IND VDD VSS MA88V11B 0.1uf OSC SELF EN 3V MosArt Semiconductor Corp. Spec. 4 MosArt PAD DIAGRAM (271,549.3) MA88V11B EL DRIVER (629.4,549.3) (808,665) EL IND (203.4,393.6) VDD VSS (722.8,396.5) (176.6,256) OSC SELF (604.4,260.2) (201.6,115) EN (0 0 ) , Chip size : 808umx665um Pad size : 90umx90um Substrate connect to VSS NO 1 2 3 4 5 6 7 NAME EL VDD OSC EN SELF VSS IND X 271 203.4 176.6 201.6 604.4 722.8 629.4 Y 549.3 393.6 256 115 260.2 396.5 549.3 MosArt Semiconductor Corp. Spec. 5 MosArt PACKAGE (a) SOT26 MA88V11B EL DRIVER 1 IND EL 6 (88V11B) 2 VSS VDD OSC 5 3 EN 4 Unit : mm 2.8 0.4 2.9 1.9 1.6 (b) SOT28 1 2 3 4 EN SELF 8 7 6 5 OSC VDD EL NC VSS IND Unit : mm 2.8 0.4 1.1 0.8 (88V11B) 1.6 1.1 0.65 2.9 0.8 MosArt Semiconductor Corp. Spec. 6 MosArt MA88V11B EL DRIVER (c) SOP 1 2 3 4 EL VDD OSC EN IND VSS NC SELF 8 7 6 5 (88V11B) Unit : mm 0.51 1.27 4 6.2 (d) MSOP 1 2 3 4 EL VDD OSC EN IND VSS NC SELF 8 7 6 5 Unit : mm 0.3 0.65 3 4.9 1.02 1.75 5 (88V11B) 3 MosArt Semiconductor Corp. Spec. 7 MosArt DC CHARACTERISTICS MA88V11B EL DRIVER Item Oscillation frequency Operating voltage Standby current Operating current (3.0V) High level input voltage Low level input voltage High level input current (1) High level input current (2) Low level input current Output drive current (3.0V) Output sink current (3.0V) Symbol Fosc VDD Istb Iop Vih Vil Iih1 Iih2 Iil Ioh Iol Condition Build-in RC oscillation Min Typ 1050 Max Unit KHz 1.5 VDD=3V EN=VDD(3V) SELF, EN SELF, EN SELF EN SELV, SELF, EN EL, IND Voh=2.2V EL, IND Vol=0.8V 0 0.8*Vdd 0 0 3.0 0 889 3.3V 0.1 V uA uA Vdd 0.2*Vdd 0.1 0.1 0.2 225 11.2 V V uA uA uA uA mA MosArt Semiconductor Corp. Spec. 8 |
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