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 MA88V11B EL DRIVER
Line-up & Specification V1.0
MosArt
SEMICONDUCTOR CORP.
2000 All rights reserved
MosArt
BONDING DIAGRAM
MA88V11B EL DRIVER
EL
IND
VDD
VSS
OSC
SELF
EN
Chip size : 808um * 665um Pad size : 90um * 90um
FEATURES
3V battery operation No external R-C required for oscillation Two EL driving frequency can be selected to change the colors of EL lights 3 seconds delay after EN released
OVERVIEW
The MA88V11B is designed for driving EL on watch's back light. The operating voltage is 3V. An inductor is used to generate the high voltage, and one diode, 2 transistors and a resistor are necessary. The EL deriving frequency can be selected for changing the color of EL lights. MA88V11B can be selected for normal trigger or delay 3 seconds.
MosArt Semiconductor Corp. Spec. 1
MosArt
PIN DESCRIPTION
MA88V11B EL DRIVER
Pin 1 2 3 4 5 6 7
Pin name EL VDD OSC EN SELF VSS IND
Pin description Output for EL charge Chip Power positive Oscillator pin Enable pin, High enable. (*note1 ) EL driving frequency selection(*note1 ) Chip power ground Output for EL discharge
*Note1 : Built in pull down resistor
OPERATION DESCRIPTION
1)
EL driving frequency selection SELF Floating 1 EL driving frequency 500Hz 1000Hz Color of EL lights Green Blue
2)
Trigger mode EN No connect EN pin connect a capacitor to VDD Operation in 3V use 0.1uf capacitor. Trigger mode Normal 3 sec. delay
MosArt Semiconductor Corp. Spec.
2
MosArt
(i) Normal mode
MA88V11B EL DRIVER
EN
EL
IND
EL LAMP ON
(ii)
Delay mode
( EN pin connect a capacitor to VDD )
EN
EL
IND
EL LAMP ON
Delay 3 second
MosArt Semiconductor Corp. Spec.
3
MosArt
APPLICATION CIRCUIT
(1) Operation voltage 3V, normal trigger mode
MA88V11B EL DRIVER
2mH48[ /
L1 EL 1N4148 D1 Q1 10K R1 Q2
EL
IND
VDD
VSS
MA88V11B
OSC SELF
EN
3V
(2) Operation voltage 3V, delay 3 seconds mode
[ 4 2H 8 m/
L1 EL 1N4148 D1 Q1 Q2 10K 1 R
EL
IND
VDD
VSS
MA88V11B 0.1uf
OSC SELF
EN
3V
MosArt Semiconductor Corp. Spec.
4
MosArt
PAD DIAGRAM
(271,549.3)
MA88V11B EL DRIVER
(629.4,549.3)
(808,665)
EL
IND
(203.4,393.6)
VDD
VSS
(722.8,396.5)
(176.6,256)
OSC
SELF
(604.4,260.2)
(201.6,115)
EN
(0 0 ) , Chip size : 808umx665um Pad size : 90umx90um
Substrate connect to VSS
NO 1 2 3 4 5 6 7
NAME EL VDD OSC EN SELF VSS IND
X 271 203.4 176.6 201.6 604.4 722.8 629.4
Y 549.3 393.6 256 115 260.2 396.5 549.3
MosArt Semiconductor Corp. Spec.
5
MosArt
PACKAGE
(a) SOT26
MA88V11B EL DRIVER
1
IND
EL
6
(88V11B)
2
VSS
VDD OSC
5
3
EN
4
Unit : mm
2.8 0.4 2.9 1.9 1.6
(b) SOT28
1 2 3 4 EN SELF 8 7 6 5
OSC VDD EL
NC VSS IND
Unit : mm
2.8
0.4
1.1
0.8
(88V11B)
1.6
1.1
0.65 2.9
0.8
MosArt Semiconductor Corp. Spec.
6
MosArt
MA88V11B EL DRIVER
(c) SOP
1 2 3 4 EL VDD OSC EN IND VSS NC SELF 8 7 6 5
(88V11B)
Unit : mm
0.51 1.27
4 6.2
(d) MSOP
1 2 3 4
EL VDD OSC EN
IND VSS NC SELF
8 7 6 5
Unit : mm
0.3 0.65
3 4.9
1.02
1.75
5
(88V11B)
3
MosArt Semiconductor Corp. Spec.
7
MosArt
DC CHARACTERISTICS
MA88V11B EL DRIVER
Item
Oscillation frequency Operating voltage Standby current Operating current (3.0V) High level input voltage Low level input voltage High level input current (1) High level input current (2) Low level input current Output drive current (3.0V) Output sink current (3.0V)
Symbol
Fosc VDD Istb Iop Vih Vil Iih1 Iih2 Iil Ioh Iol
Condition
Build-in RC oscillation
Min
Typ
1050
Max
Unit
KHz
1.5 VDD=3V EN=VDD(3V) SELF, EN SELF, EN SELF EN SELV, SELF, EN EL, IND Voh=2.2V EL, IND Vol=0.8V 0 0.8*Vdd 0 0
3.0 0 889
3.3V 0.1
V uA uA
Vdd 0.2*Vdd 0.1 0.1 0.2 225 11.2
V V uA uA uA uA mA
MosArt Semiconductor Corp. Spec.
8


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